PART |
Description |
Maker |
AM29LV800DB-70EF AM29LV800DB-90EF AM29LV800DB-70WC |
Flash Memory IC; Memory Size:8Mbit; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70nS; Series:AM29 RoHS Compliant: Yes 512K X 16 FLASH 3V PROM, 70 ns, PDSO48 512K X 16 FLASH 3V PROM, 90 ns, PDSO48 512K X 16 FLASH 3V PROM, 70 ns, PBGA48 512K X 16 FLASH 3V PROM, 90 ns, PBGA48 512K X 16 FLASH 3V PROM, 120 ns, PDSO48 512K X 16 FLASH 3V PROM, 120 ns, PDSO44 512K X 16 FLASH 3V PROM, 90 ns, PDSO44
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Spansion, Inc. SPANSION LLC
|
LH28F008SCHB-LF12 LH28F008SCT-LF12 LH28F008SCR-LF8 |
1M X 8 FLASH 2.7V PROM, 120 ns, PBGA42 FBGA-42 1M X 8 FLASH 2.7V PROM, 120 ns, PDSO40 TSOP1-40 1M X 8 FLASH 2.7V PROM, 85 ns, PDSO40 REVERSE, TSOP1-40 1M X 8 FLASH 2.7V PROM, 120 ns, PDSO40 REVERSE, TSOP1-40 1M X 8 FLASH 2.7V PROM, 85 ns, PBGA42 FBGA-42 1M X 8 FLASH 2.7V PROM, 85 ns, PDSO44 SOP-44 1M X 8 FLASH 2.7V PROM, 85 ns, PDSO40 TSOP1-40 1M X 8 FLASH 2.7V PROM, 120 ns, PDSO44 SOP-44 1M X 8 FLASH 5V PROM, 120 ns, PDSO56 512K X 8 FLASH 5V PROM, 60 ns, PDSO44 2M X 8 FLASH 5V PROM, 120 ns, PDSO56 512K X 8 FLASH 5V PROM, 60 ns, PDSO48 256K X 8 FLASH 5V PROM, 80 ns, PDSO32
|
Sharp Electronics, Corp. SHARP ELECTRONICS CORP
|
MN12261 MN12C25D MN12C201D |
128 X 16 MASK PROM, 6 ns, PDIP16 0.300 INCH, PLASTIC, DIP-16 38 X 16 MASK PROM, 2 ns, PSIP9 64 X 16 MASK PROM, 2 ns, PDIP16
|
Panasonic, Corp. PANASONIC CORP
|
63S280 |
(63S28x) High Performance 256 x 8 PROM TiW PROM
|
Monolithic Memories
|
8200901JA 8200901LA 82009013X 8200901LX 8200901KX |
x8 PROM x8胎膜早破 Memory, Digital, Bipolar, 64K PROM
|
N/A
|
CY7C251 7C251 CY7C254 |
16K x 8 Power Switched and Reprogrammable PROM(16K x 8功率转换可重复编程的PROM) 16K的8电源开关和可再编程胎膜早破6K的8功率转换和可重复编程的可编程 16K x 8 Power Switched and Reprogrammable PROM(16K x 8功率转换可重复编程的 PROM) From old datasheet system 16K x 8 Power Switched andReprogrammable PROM
|
Cypress Semiconductor Corp.
|
S29GL512N S29GL256N90FFI010 S29GL256N90FFIV20 S29G |
MirrorBit Flash Family 16M X 16 FLASH 3V PROM, 100 ns, PBGA64 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBitProcess Technology 32M X 16 FLASH 3V PROM, 100 ns, PBGA64 JT 13C 13#22M PIN PLUG 16M X 16 FLASH 3V PROM, 100 ns, PDSO56 MirrorBit Flash Family 16M X 16 FLASH 3V PROM, 80 ns, PDSO56 MirrorBit Flash Family MirrorBit闪存系列 Replaced by PTB48520W : 16M X 16 FLASH 3V PROM, 100 ns, PBGA64 JT 13C 13#22D SKT PLUG
|
Spansion, Inc. Spansion Inc. ETC
|
MBM29LV160BE70TN MBM29LV160BE70TR MBM29LV160BE70PB |
16M (2M X 8/1M X 16) BIT 2M X 8 FLASH 3V PROM, 120 ns, PBGA48 KPT 23C 22#20 1#16 SKT PLUG 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 16M (2M X 8/1M X 16) BIT 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Central Semiconductor, Corp. Fujitsu, Ltd. Fujitsu Limited http:// Fujitsu Component Limited.
|
S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56 2M X 16 FLASH 3V PROM, 100 ns, PBGA56 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 4M X 16 FLASH 3V PROM, 100 ns, PDSO48
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Spansion, Inc. SPANSION LLC
|
MSM538022CRS MSM531031BGS-K |
1M X 8 MASK PROM, 100 ns, PDIP42 128K X 8 MASK PROM, 150 ns, PDSO32
|
OKI ELECTRIC INDUSTRY CO LTD
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